THE APPLICATION OF TEMPERATURE-GRADIENT ZONE-MELTING TO SILICON-WAFER PROCESSING

被引：3

|

作者：

CHANG, M

KENNEDY, R

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 10期

关键词：

D O I：

10.1149/1.2127216

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

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页码：2193 / 2198

页数：6

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