NB-AL-ALOX-AL-NB TUNNEL-JUNCTIONS USING ELECTRON-BEAM EVAPORATION

被引：5
|
作者：
SIMON, W
LIEBEMANN, EK
SIMON, M
BUCHER, E
机构：
[1] University of Konstanz, Faculty of Physics, W-7750 Konstanz
来源：
JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 09期
关键词：
D O I：
10.1063/1.352180
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
For the first time tunnel junctions are prepared by a selective niobium etching process from Nb-Al-AlOx-Al-Nb sandwiches electron beam evaporated in ultrahigh vacuum. A quality factor of V(m) = 27 mV at 4.2 K has been obtained by cooling the Nb base electrode before Al deposition. The cooling of the Nb base layer had a considerable influence on the subgap current below 4.2 K. The temperature dependence of the subgap current down to 1.5 K is compared to the BCS prediction.
引用
收藏
页码：4474 / 4476
页数：3
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