RAMAN-SPECTROSCOPY AS A SURFACE SENSITIVE TECHNIQUE ON SEMICONDUCTORS

被引：23
|
作者：
STOLZ, HJ [1 ]
ABSTREITER, G [1 ]
机构：
[1] TECH UNIV MUNCHEN,DEPT PHYS,D-8046 GARCHING,FED REP GER
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期
关键词：
D O I：
10.1116/1.571067
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：380 / 382
页数：3
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