SCHOTTKY-BARRIER AND MIS TUNNEL-DIODES ON HYDROGENATED AMORPHOUS SILICON OF PHOTO-VOLTAIC QUALITY PREPARED BY CATHODE SPUTTERING - ELECTRIC PROPERTIES DETERMINED BY CAPACITANCE MEASUREMENTS

被引：25

|

作者：

VIKTOROVITCH, P ^{[1
]}

JOUSSE, D ^{[1
]}

CHENEVASPAULE, A ^{[1
]}

VIEUXROCHAS, L ^{[1
]}

机构：

[1] CEN,CEA,LETI,EPA,F-38041 GRENOBLE,FRANCE

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1979年 / 14卷 / 01期

关键词：

D O I：

10.1051/rphysap:01979001401020100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：201 / 208

页数：8

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[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 7025 - 7033
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[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4847 - 4854
[3] LIGHT-INDUCED AGING EFFECTS IN SCHOTTKY DIODES ON SPUTTERED HYDROGENATED AMORPHOUS-SILICON (A-SIH) - INTERPRETATION OF THE PHOTO-VOLTAIC STABILITY
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VIKTOROVITCH, P
VIEUXROCHAZ, L
CHENEVASPAULE, A
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 767 - 772
[4] CHANGES IN PHOTO-VOLTAIC AND DARK ELECTRICAL-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON DIODES INDUCED BY FORWARD BIAS CARRIER INJECTION
SAKATA, I
HAYASHI, Y
[J]. ELECTRONICS LETTERS, 1982, 18 (25-2) : 1075 - 1076