AN ULTRA-HIGH-SPEED OPTOELECTRONIC INTEGRATED RECEIVER FOR FIBEROPTIC COMMUNICATIONS

被引：9
|
作者：
YANO, H
SASAKI, G
MURATA, M
HAYASHI, H
机构：
[1] Optoelectronics R&D Laboratories, Sumitomo Electric Industries, Ltd., Yokohama, 244, 1, Taya-cho, Sakae-ku
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 10期
关键词：
D O I：
10.1109/16.158796
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An ultra-high-speed optoetectronic integrated receiver consisting of a GaInAs p-i-n photodiode and a transimpedance AlInAs/GaInAs high-electron-mobility-transistor amplifier has been successfully fabricated on an InP substrate. A 3-dB bandwidth of 6 GHz with a transimpedance of 50 dB-OMEGA was achieved for the receiver with a feedback resistance of 750-OMEGA. Measured noise currents of the receiver were analyzed and found to be dominated by the low-frequency noise and the induced gate noise. The sensitivity of -21.2 dBm for 8.0-Gb/s NRZ signals was deduced from the noise current characteristics.
引用
收藏
页码：2254 / 2259
页数：6
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