THE PREPARATION OF INSB AND INAS1-XSBX BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：81
|
作者：
BIEFELD, RM
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1986年 / 75卷 / 02期
关键词：
D O I：
10.1016/0022-0248(86)90035-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：255 / 263
页数：9
相关论文
共 50 条
  • [1] IMPROVING THE PERFORMANCE OF INAS1-XSBX/INSB INFRARED DETECTORS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    BIEFELD, RM
    WENDT, JR
    KURTZ, SR
    [J]. JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 836 - 839
  • [2] P-N-JUNCTION FORMATION IN INSB AND INAS1-XSBX BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    CHIANG, PK
    BEDAIR, SM
    [J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 383 - 385
  • [3] Antimony segregation in an InAs/InAs1-xSbx superlattice grown by metalorganic chemical vapor deposition
    Yang, Qun
    Yuan, Renliang
    Wang, Lingling
    Shi, Ruikai
    Zuo, Jian-Min
    [J]. JOURNAL OF APPLIED PHYSICS, 2021, 130 (09)
  • [4] THE GROWTH OF INAS1-XSBX INAS STRAINED-LAYER SUPERLATTICES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    BIEFELD, RM
    BAUCOM, KC
    KURTZ, SR
    [J]. JOURNAL OF CRYSTAL GROWTH, 1994, 137 (1-2) : 231 - 234
  • [5] Structural and optical characterization of type-II InAs/InAs1-xSbx superlattices grown by metalorganic chemical vapor deposition
    Steenbergen, E. H.
    Huang, Y.
    Ryou, J. -H.
    Ouyang, L.
    Li, J. -J.
    Smith, D. J.
    Dupuis, R. D.
    Zhang, Y. -H.
    [J]. APPLIED PHYSICS LETTERS, 2011, 99 (07)
  • [6] Raman spectroscopy of InAs1-xSbx/InSb and InAs1-xSbx/InAs superlattices, under hydrostatic pressure
    Webb, SJ
    Stradling, RA
    Nagata, K
    [J]. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 1998, : 315 - 318
  • [7] Raman spectroscopy of InAs1-xSbx/InSb and InAs1-xSbx/InAs superlattices, under hydrostatic pressure
    Webb, SJ
    Stradling, RA
    Nagata, K
    [J]. COMPOUND SEMICONDUCTORS 1997, 1998, 156 : 315 - 318
  • [8] GROWTH OF INSB ON GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    BIEFELD, RM
    HEBNER, GA
    [J]. JOURNAL OF CRYSTAL GROWTH, 1991, 109 (1-4) : 272 - 278
  • [9] HETEROEPITAXIAL GROWTH OF CDTE ON INSB BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    SUGIURA, O
    TANAKA, Y
    SHIINA, K
    MATSUMURA, M
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (19) : 1515 - 1517
  • [10] Demonstration of long wavelength infrared type-II InAs/InAs1-xSbx superlattices photodiodes on GaSb substrate grown by metalorganic chemical vapor deposition
    Wu, D. H.
    Dehzangi, A.
    Zhang, Y. Y.
    Razeghi, M.
    [J]. APPLIED PHYSICS LETTERS, 2018, 112 (24)
12345