1.3MUM LUMINESCENCE IN (INAS)N/(GAAS)N STRAINED QUANTUM-WELL STRUCTURES GROWN ON GAAS

被引：0

作者：

ROAN, EJ ^{[1
]}

CHENG, KY ^{[1
]}

PEARAH, PJ ^{[1
]}

LIU, X ^{[1
]}

HSIEH, KC ^{[1
]}

BISHOP, SG ^{[1
]}

机构：

[1] UNIV ILLINOIS, CTR COMPOUND SEMICOND MICROELECTR, URBANA, IL 61801 USA

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1992年 / 120期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Optical emission from pseudomorphic InGaAs-on-GaAs quantum-well heterostructures has been extended to useful wavelengths (1.3-mu-m) by replacing an InxGa1-xAs random alloy quantum well with an (InAs)n/(GaAs)n short-period superlattice (SPS). With the same quantum-well width, the photoluminescence peak wavelength of the SPS structure is always longer than that of the In0.5Ga0.5As random-alloy structure. Strong photoluminescence was observed in (InAs)n/(GaAs)n SPS quantum wells with thicknesses up to 72 angstrom. The longest optical-emission wavelength observed at room temperature in (InAs)n/(GaAs)n SPS quantum-well structures was 1.34-mu-m.

引用

页码：577 / 582

页数：6

共 50 条

[1] LONG-WAVELENGTH (1.3 MU-M) LUMINESCENCE IN INGAAS STRAINED QUANTUM-WELL STRUCTURES GROWN ON GAAS
ROAN, EJ
CHENG, KY
APPLIED PHYSICS LETTERS, 1991, 59 (21) : 2688 - 2690
[2] ULTRATHIN INAS/GAAS SINGLE QUANTUM-WELL STRUCTURES GROWN BY ATOMIC LAYER EPITAXY
TISCHLER, MA
ANDERSON, NG
BEDAIR, SM
APPLIED PHYSICS LETTERS, 1986, 49 (18) : 1199 - 1200
[3] Optimization of strained quantum-well InGaAs/GaAs heterolaser structures
Gorbylev, V.A.
Petrov, A.I.
Petukhov, A.B.
Chel'nyj, A.A.
Kvantovaya Elektronika (Moscow), 1993, 20 (05):
[4] STRAINED INGAAS QUANTUM-WELL LASERS GROWN ON (111)B GAAS
TAO, IW
WANG, WI
ELECTRONICS LETTERS, 1992, 28 (08) : 705 - 706
[5] MAGNETOTRANSPORT AND LUMINESCENCE MEASUREMENTS IN AN N-TYPE SELECTIVELY DOPED INGAAS/GAAS STRAINED QUANTUM-WELL STRUCTURE
FRITZ, IJ
SCHIRBER, JE
JONES, ED
DRUMMOND, TJ
DAWSON, LR
APPLIED PHYSICS LETTERS, 1987, 50 (19) : 1370 - 1372
[6] Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy
A. S. Bolshakov
V. V. Chaldyshev
A. V. Babichev
D. A. Kudryashov
A. S. Gudovskikh
I. A. Morozov
M. S. Sobolev
E. V. Nikitina
Semiconductors, 2015, 49 : 1400 - 1404
[7] GAAS1-XPX/GAAS QUANTUM-WELL STRUCTURES WITH TENSILE-STRAINED BARRIERS
AGAHI, F
LAU, KM
KOTELES, ES
BALIGA, A
ANDERSON, NG
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) : 459 - 465
[8] Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy
Bolshakov, A. S.
Chaldyshev, V. V.
Babichev, A. V.
Kudryashov, D. A.
Gudovskikh, A. S.
Morozov, I. A.
Sobolev, M. S.
Nikitina, E. V.
SEMICONDUCTORS, 2015, 49 (11) : 1400 - 1404
[9] Design considerations for 1.3μm emission of GaInNAs/GaAs strained quantum-well lasers
Alexandropoulos, D
Adams, MJ
IEE PROCEEDINGS-OPTOELECTRONICS, 2003, 150 (02): : 105 - 109
[10] (INAS)1/(GAAS)4 SUPERLATTICE STRAINED QUANTUM-WELL LASER AT 980 NM
CHAND, N
DUTTA, NK
CHU, SNG
LOPATA, J
ELECTRONICS LETTERS, 1991, 27 (22) : 2009 - 2011

← 1 2 3 4 5 →