POLYSILICON GROWTH KINETICS IN A LOW-PRESSURE CVD REACTOR

被引：0

作者：

HITCHMAN, ML ^{[1
]}

KANE, J ^{[1
]}

WIDMER, AE ^{[1
]}

机构：

[1] LABS RCA LTD, CH-8048 ZURICH, SWITZERLAND

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C356 / C356

页数：1

共 50 条

[1] KINETICS AND MECHANISM OF LOW-PRESSURE CVD OF POLYSILICON
HITCHMAN, ML
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C349 - C349
[2] SEMI-INSULATING POLYSILICON (SIPOS) DEPOSITION IN A LOW-PRESSURE CVD REACTOR .1. GROWTH-KINETICS
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[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (03) : 485 - 500
[3] POLYSILICON GROWTH-KINETICS IN A LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION REACTOR
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) : C356 - C356
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