INALAS/INP MODULATION DOPED HETEROSTRUCTURES BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION USING TERTIARYBUTYLPHOSPHINE

被引：4
|
作者：
PAN, N
CARTER, J
BRIERLEY, S
HENDRIKS, H
机构：
[1] Raytheon Company, Research Division, Lexington, MA 02173
来源：
APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 21期
关键词：
D O I：
10.1063/1.108130
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Undoped and modulation doped InAlAs/InP heterostructures with excellent optical and electrical characteristics are demonstrated using tertiarybutylphosphine (TBP). Low-temperature photoluminescence spectra showed the presence of a type II interface transition indicating the high quality of the interface. Two-dimensional electron gas transport in a modulation doped sample containing a sheet density of 1.8 X 10(12) cm-2 was verified by observing plateaus in the quantum Hall effect. These results confirmed that TBP can be substituted for phosphine for the growth of high quality InAlAs/InP heterostructures.
引用
收藏
页码：2572 / 2574
页数：3
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