REVERSIBLE PHOTOINDUCED CHANGE OF PHOTOCONDUCTIVITY IN AMORPHOUS-CHALCOGENIDE FILMS

被引：45

作者：

SHIMAKAWA, K ^{[1
]}

INAMI, S ^{[1
]}

ELLIOTT, SR ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,DEPT PHYS CHEM,CAMBRIDGE,ENGLAND

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.42.11857

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Prolonged exposure to strongly absorbed light decreases the photoconductivity of well-annealed amorphous chalcogenide (Se, As2Se3, and As2S3) films, similar to the behavior observed in hydrogenated amorphous silicon and organic amorphous polysilanes. This change is removed by annealing the glass transition temperature. The reversible change in photoconductivity appears to be an intrinsic effect in amorphous semiconductors. The optically induced defect-creation reactions responsible for this, and for light-induced changes in ac conductivity, are discussed in detail.

引用

页码：11857 / 11861

页数：5

共 50 条

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