共 50 条
- [1] EFFECT OF UNIAXIAL STRESS ON BINDING TO ISOELECTRONIC IMPURITIES IN GAP PHYSICAL REVIEW B, 1972, 6 (08): : 3082 - &
- [2] EFFECT OF UNIAXIAL STRESS ON EXCITONS BOUND TO BISMUTH IN GAP PHYSICAL REVIEW B, 1970, 1 (06): : 2592 - &
- [3] BINDING TO ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1972, 17 (03): : 233 - +
- [5] DIELECTRIC THEORY OF IMPURITY BINDING ENERGIES .2. DONOR AND ISOELECTRONIC IMPURITIES IN GAP PHYSICAL REVIEW B, 1970, 1 (04): : 1545 - &
- [6] PHONON SIDE-BAND OF EXCITONS BOUND TO ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS PHYSICAL REVIEW B, 1993, 47 (11): : 6330 - 6339
- [8] ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS - SURVEY OF BINDING MECHANISMS JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (14): : 1936 - &
- [10] LUMINESCENT EFFICIENCY OF EXCITONS BOUND TO ISOELECTRONIC TRAP NITROGEN IN GAP BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (03): : 414 - 415