FE-ZR SPUTTERED THIN-FILMS FOR PERPENDICULAR MAGNETIC RECORDING MEDIA

被引:4
|
作者
NAKAGAWA, S
TANAKA, H
NITTA, M
NAOE, M
机构
[1] Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152
关键词
D O I
10.1063/1.348120
中图分类号
O59 [应用物理学];
学科分类号
摘要
Fe-Zr sputtered thin films with large perpendicular magnetic anisotropy were prepared by facing targets sputtering (FTS) apparatus. Perpendicular anisotropy was clearly observed at Zr content around 10 at. %. The substrate temperature T(sub) of approximately 100-degrees-C resulted in the large perpendicular magnetic anisotropy energy K(u) of 1.2 X 10(6) erg/cc and the high perpendicular coercivity H(c)-perpendicular-to of 1.0 kOe in the Fe-Zr sputtered film with the saturation magnetization 4-pi-M(s) of 6.7 kG. It was also shown that T(sub) higher than 200-degrees-C caused the decline of K(u) and the lowering of 4-pi-M(s). It is concluded that Fe-Zr sputtered film may be applicable for the media in the perpendicular magnetic recording system.
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页码:5181 / 5183
页数:3
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