Fe-Zr sputtered thin films with large perpendicular magnetic anisotropy were prepared by facing targets sputtering (FTS) apparatus. Perpendicular anisotropy was clearly observed at Zr content around 10 at. %. The substrate temperature T(sub) of approximately 100-degrees-C resulted in the large perpendicular magnetic anisotropy energy K(u) of 1.2 X 10(6) erg/cc and the high perpendicular coercivity H(c)-perpendicular-to of 1.0 kOe in the Fe-Zr sputtered film with the saturation magnetization 4-pi-M(s) of 6.7 kG. It was also shown that T(sub) higher than 200-degrees-C caused the decline of K(u) and the lowering of 4-pi-M(s). It is concluded that Fe-Zr sputtered film may be applicable for the media in the perpendicular magnetic recording system.
机构:
Korea Univ, Dept Nano Semicond Engn, Seoul 02841, South KoreaKorea Univ, Dept Nano Semicond Engn, Seoul 02841, South Korea
Kim, Miri
Lim, Sang Ho
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机构:
Korea Univ, Dept Nano Semicond Engn, Seoul 02841, South Korea
Korea Univ, Dept Mat Sci & Engn, Seoul 02841, South KoreaKorea Univ, Dept Nano Semicond Engn, Seoul 02841, South Korea