DIRECT OBSERVATION OF THE HOT-ELECTRON DISTRIBUTION IN GAAS ALGAAS HETEROSTRUCTURES

被引：1
|
作者：
WIRNER, C
KIENER, C
BOXLEITNER, W
GORNIK, E
BOHM, G
WEIMANN, G
机构：
[1] UNIV INNSBRUCK, INST EXPTL PHYS, A-6020 INNSBRUCK, AUSTRIA
[2] VIENNA TECH UNIV, INST FESTKORPERELEKTR, A-1040 VIENNA, AUSTRIA
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 05期
关键词：
D O I：
10.1088/0268-1242/9/5S/107
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have directly observed the electric-field-driven hot-electron distribution in high-mobility GaAs/AlGaAs heterostructures by detecting the grating-induced far-infrared Smith-Purcell emission. In samples with very low concentration the distribution develops a non-thermal shape at low electric fields due to the dominance of LO phonon emission. For the first time the average mean free path of the hot electrons is determined by studying the emission signal as a function of the grating period length.
引用
收藏
页码：793 / 795
页数：3
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