DIRECT OBSERVATION OF THE HOT-ELECTRON DISTRIBUTION IN GAAS ALGAAS HETEROSTRUCTURES

被引：1
|
作者：
WIRNER, C
KIENER, C
BOXLEITNER, W
GORNIK, E
BOHM, G
WEIMANN, G
机构：
[1] UNIV INNSBRUCK, INST EXPTL PHYS, A-6020 INNSBRUCK, AUSTRIA
[2] VIENNA TECH UNIV, INST FESTKORPERELEKTR, A-1040 VIENNA, AUSTRIA
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 05期
关键词：
D O I：
10.1088/0268-1242/9/5S/107
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have directly observed the electric-field-driven hot-electron distribution in high-mobility GaAs/AlGaAs heterostructures by detecting the grating-induced far-infrared Smith-Purcell emission. In samples with very low concentration the distribution develops a non-thermal shape at low electric fields due to the dominance of LO phonon emission. For the first time the average mean free path of the hot electrons is determined by studying the emission signal as a function of the grating period length.
引用
收藏
页码：793 / 795
页数：3
相关论文
共 50 条
  • [1] Direct observation of the hot-electron distribution in GaAs/AlGaAs heterostructures
    Wirner, C.
    Kiener, C.
    Boxleitner, W.
    Gornik, E.
    Bohm, G.
    Weimann, G.
    [J]. Semiconductor Science and Technology, 1994, 9 (5 SUPPL) : 793 - 795
  • [2] DIRECT OBSERVATION OF THE HOT-ELECTRON DISTRIBUTION FUNCTION IN GAAS/ALGAAS HETEROSTRUCTURES
    WIRNER, C
    KIENER, C
    BOXLEITNER, W
    WITZANY, M
    GORNIK, E
    VOGL, P
    BOHM, G
    WEIMANN, G
    [J]. PHYSICAL REVIEW LETTERS, 1993, 70 (17) : 2609 - 2612
  • [3] HOT-ELECTRON ELECTROLUMINESCENCE IN ALGAAS/GAAS HETEROSTRUCTURES
    PETERSEN, CL
    FREI, MR
    LYON, SA
    [J]. SOLID-STATE ELECTRONICS, 1989, 32 (12) : 1919 - 1923
  • [4] HOT-ELECTRON VELOCITY CHARACTERISTICS AT ALGAAS/GAAS HETEROSTRUCTURES
    TOMIZAWA, M
    YOKOYAMA, K
    YOSHII, A
    [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) : 464 - 465
  • [5] HOT-ELECTRON DISTRIBUTION AND TRANSPORT IN ALGAAS/GAAS/ALGAAS QUANTUM WELLS
    MAKIYAMA, K
    INOUE, M
    ASHIDA, M
    CHO, Y
    IWAI, Y
    SASA, S
    HIYAMIZU, S
    [J]. SOLID-STATE ELECTRONICS, 1988, 31 (3-4) : 371 - 374
  • [6] DIRECT OBSERVATION OF IMPACT IONIZATION AND HOT-ELECTRON EFFECTS IN GAAS
    OHYAMA, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (03): : L188 - L190
  • [7] HOT-ELECTRON NOISE AND DIFFUSION IN ALGAAS/GAAS
    ANINKEVICIUS, V
    BAREIKIS, V
    KATILIUS, R
    KOPEV, PS
    LEYS, MR
    LIBERIS, J
    MATULIONIS, A
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (05) : 576 - 579
  • [8] Hot-electron noise and diffusion in AlGaAs/GaAs
    Aninkevicius, V.
    Bareikis, V.
    Katilius, R.
    Kop'ev, P.S.
    Leys, M.R.
    Liberis, J.
    Matulionis, A.
    [J]. Semiconductor Science and Technology, 1994, 9 (5 SUPPL) : 576 - 579
  • [9] TRANSIENT SIMULATION OF ALGAAS/GAAS/ALGAAS AND ALGAAS/INGAAS/ALGAAS HOT-ELECTRON TRANSISTORS
    KUZUHARA, M
    KIM, K
    HESS, K
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (01) : 118 - 123
  • [10] HOT-ELECTRON INDUCED DEGRADATION IN ALGAAS/GAAS HEMTS
    TEDESCO, C
    CANALI, C
    MAGISTRALI, F
    PACCAGNELLA, A
    ZANONI, E
    [J]. MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 405 - 408
12345