BEHAVIOR OF NEUTRON-IRRADIATED SILICON UNDER THE ACTION OF HIGH-POWER LASER-PULSES

被引：0

作者：

NIDAEV, EV

SMIRNOV, LS

STAS, VF

SOLOVEV, SP

KHARCHENKO, VA

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1980年 / 14卷 / 10期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1165 / 1167

页数：3

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[1] BEHAVIOR OF NEUTRON-IRRADIATED SILICON UNDER THE ACTION OF HIGH-POWER LASER PULSES.
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Solov'ev, S.P.
Kharchenko, V.A.
Soviet physics. Semiconductors, 1980, 14 (10): : 1165 - 1167
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[4] LOCALIZATION OF HIGH-POWER LASER-PULSES IN PLASMAS
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