Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic temperatures

被引：0

作者：

Lysenko, V. S. ^{[1
]}

Tyagulsky, I. P. ^{[1
]}

Osiyuk, I. N. ^{[1
]}

Nazarov, A. N. ^{[1
]}

机构：

[1] NAS Ukraine, V Lashkaryov Inst Semicond Phys, UA-03028 Kiev, Ukraine

来源：

SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2007年 / 10卷 / 02期

关键词：

GaAs field-effect transistor; Schottky barrier; CVC;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The results of experiments on the influence of recharging the electron traps in a Si-SiO2 transition layer on the low-temperature characteristics of fully depleted silicon in insulator MOSFET devices are presented. It is shown that the low-dose gamma-radiation improves electrophysical parameters of the transition layer.

引用

页码：34 / 39

页数：6