GATE OXIDE DEFECTS NEAR SELECTIVELY OXIDIZED SILICON

被引：1
|
作者：
OHWADA, K
SAKUMA, K
EHARA, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 04期
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D O I：
10.1143/JJAP.17.737
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：737 / 738
页数：2
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