A STUDY OF INSB-NISB MAGNETORESISTANCE MATERIAL

被引：0
|
作者：
XIAO, YY
LI, Q
机构：
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 1993年 / 35卷 / 03期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The microstructures and magnetoresistance properties of InSb-NiSb eutectics of different compositions and various unidirectional solidification parameters are studied. The relationship between the NiSb needle spacing (lambda) and the solidification rate (upsilon) is found to be lambda2upsilon = constant. Resistivities parallel and perpendicular to the NiSb needles, resistance with and without magnetic field (R(B), R0) under various magnetic inductions (B) and temperatures and the Hall coefficient (R(H)) (- 150 to + 100 C) are measured. The magnetoresistance properties of several samples accord satisfactorily with those of Siemens field plates of D, P, L, T and M types.
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页码：273 / 277
页数：5
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