ON THE COMMON-EMITTER BREAKDOWN VOLTAGE OF BIPOLAR JUNCTION TRANSISTORS

被引：1
|
作者：
JANG, SL
机构：
[1] Department of Electronic Engineering, National Taiwan Institute of Technology, Taipei
来源：
SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 02期
关键词：
D O I：
10.1016/0038-1101(93)90142-D
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In bipolar junction transistors, it was believed that the common emitter breakdown voltage can be derived from the equation alpha(F)M = 1, where M is the collector-base multiplication factor, and alpha(F) is the static pin factor. When this condition holds, the collector current rises steeply and it is limited by the external resistance and the capability of the power supply or the device is destroyed. However, the common-emitter current-voltage characteristics with the base open can also be derived from alpha(F)M = 1. In the common-emitter configuration with the base open, the I-V output characteristics show that the collector current is finite. In this paper we resolve the conflict of using alpha(F)M = 1 and derive the output characteristics and the breakdown condition on a rigorous physical basis.
引用
下载
收藏
页码：213 / 216
页数：4
相关论文
共 50 条
  • [1] Interpretation of the common-emitter offset voltage in heterojunction bipolar transistors
    McAlister, SP
    McKinnon, WR
    Driad, R
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (08) : 1745 - 1747
  • [2] High common-emitter current gains obtained by pnp GaN bipolar junction transistors
    Kumakura, K
    Makimoto, T
    Kobayashi, N
    GAN AND RELATED ALLOYS-2001, 2002, 693 : 793 - 798
  • [3] Common-emitter current-voltage characteristics of a pnp GaN bipolar junction transistor
    Kumakura, K
    Makimoto, T
    Kobayashi, N
    APPLIED PHYSICS LETTERS, 2002, 80 (07) : 1225 - 1227
  • [4] Superiority of common-base to common-emitter heterojunction bipolar transistors
    Qin, Guoxuan
    Wang, Guogong
    McCaughan, Leon
    Ma, Zhenqiang
    APPLIED PHYSICS LETTERS, 2010, 97 (13)
  • [5] Demonstration of Common-Emitter Operation in AlGaN/SiC Heterojunction Bipolar Transistors
    Miyake, Hiroki
    Kimoto, Tsunenobu
    Suda, Jun
    IEEE ELECTRON DEVICE LETTERS, 2010, 31 (09) : 942 - 944
  • [6] Analytical explanation of different RF characteristics exhibited with common-emitter and common-base bipolar transistors
    Jiang, NY
    Wang, GG
    Ma, ZQ
    PROCEEDING OF THE 2004 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2004, : 112 - 115
  • [7] Npn InGaN/GaN double heterojunction bipolar transistors with high common-emitter current gains
    Makimoto, T
    Kumakura, K
    Kobayashi, N
    COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 33 - 38
  • [8] TEMPERATURE-DEPENDENCE OF BREAKDOWN VOLTAGE FOR TRANSISTORS IN THE SCHEME WITH THE COMMON EMITTER
    ARONOV, MD
    GOLUBEV, AP
    RADIOTEKHNIKA I ELEKTRONIKA, 1983, 28 (10): : 2084 - 2086
  • [9] BREAKDOWN CHARACTERISTICS OF EMITTER BASE AND COLLECTOR BASE JUNCTIONS OF SILICON BIPOLAR JUNCTION TRANSISTORS
    JANG, SL
    CHERN, KL
    SOLID-STATE ELECTRONICS, 1992, 35 (05) : 615 - 622
  • [10] EFFECTS OF BAND-GAP NARROWING ON COMMON-EMITTER CURRENT GAIN OF GAAS HOMOJUNCTION BIPOLAR-TRANSISTORS
    LIOU, JJ
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) : 5181 - 5184
12345