DEPOSITION OF BARIUM POTASSIUM BISMUTH OXIDE (BKBO) THIN FILMS BY LASER ABLATION

被引:4
|
作者
Lacoe, R. C. [1 ]
Wendt, J. P. [1 ]
Adams, P. M. [1 ]
机构
[1] Aerosp Corp, Elect Technol Ctr, POB 92957, Los Angeles, CA 90009 USA
关键词
D O I
10.1109/77.233366
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High transition temperature barium potassium bismuth oxide (BKBO) thin films have been successfully deposited by the method of pulsed-laser ablation. The best results were obtained ablating from a potassium-rich single target in a pure argon background onto < 100 > SrTiO3 substrates. Films with superconducting onset and zero resistance temperatures of 28.5 and 27.5 K, respectively, were routinely obtained, with room-temperature resistivity as low as 250 mu Omega-cm. X-ray diffraction analysis showed the films were single crystal and epitaxially oriented in the < 100 > direction. X-ray rocking curves of the BKBO (200) reflection revealed a FWHM of similar to 0.7 degrees Delta theta and also indicated that the BKBO < 100 > lattice direction was misoriented with respect to that of the SrTiO3 substrate by 0.13 degrees.
引用
收藏
页码:1563 / 1566
页数:4
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