SWITCHING SPEEDS IN DOUBLE-BARRIER RESONANT-TUNNELING DIODE STRUCTURES

被引：4
|
作者：
MAINS, RK
HADDAD, GI
机构：
[1] Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 12期
关键词：
D O I：
10.1063/1.349726
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Switching speeds are calculated for GaAs-AlGaAs resonant-tunneling diode structures with different barrier widths from the time-dependent Schrodinger equation. The speed is determined by monitoring the device current as the bias voltage is instantaneously switched. Effective mass discontinuities at the barrier and quantum well edges are included. Comparisons with previously published results using the wave packet approach are given. It is found that the turn-off transient is dominated by the lifetime of the quasibound state; however, care must be used in calculating the lifetime.
引用
收藏
页码：7638 / 7639
页数：2
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