Mono-and multi-affine SiC nanowires

被引：0

作者：

Kohno, Hideo ^{[1
]}

Yoshida, Hideto ^{[1
]}

Akita, Tomoki ^{[2
]}

机构：

[1] Osaka Univ, Grad Sch Sci, Dept Phys, 1-1 Machikane Yama, Toyonaka, Osaka 5600043, Japan

[2] Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Devices, Ikeda, Osaka 5638577, Japan

来源：

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY | 2006年 / 4卷

关键词：

Electron Microscopy; Nanowire Growth; Silicon Carbide; Fractal;

D O I：

10.1380/ejssnt.2006.330

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Mono-and multi-affinities have been found in complex diameter fluctuations of SiC nanowires. The nanowires are considered to be grown via the well-known vapor-liquid-solid process which is fully self-organized. The nanowires are examined by transmission electron microscopy. By calculating qth-order correlation functions of the diameter fluctuations, we reveal their scaling properties.

引用

页码：330 / 333

页数：4

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