PHYSICAL ASPECTS OF CHARGE-COUPLED-DEVICES

Important physical phenomena like incomplete charge transfer, charge trapping at interface states, thermal carrier generation and impact ionization at the interface, will be discussed. Experiments and calculations are presented to model these phenomena. The results are used for optimization of a 1.3-mu-m CMOS process for an experimental CCD video memory [1], but are also important for characterization of other silicon devices and memories.