NONLINEAR QUANTUM BEAT SPECTROSCOPY OF BOUND BIEXCITONS IN II-VI SEMICONDUCTORS

被引：10
|
作者：
ERLAND, J
RAZBIRIN, BS
LYSSENKO, VG
PANTKE, KH
HVAM, JM
机构：
[1] AF IOFFE PHYS TECH INST,194921 ST PETERSBURG,RUSSIA
[2] CHERNOGOLOVKA MICROELECTR TECHNOL & SUPERPURE MAT INST,CHERNOGOLOVKA 142432,RUSSIA
来源：
JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(94)90910-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
With the technique of nonlinear quantum beat spectroscopy (NQBS), based on time-integrated, spectrally resolved four-wave mixing, the nonlinearities of biexcitons localized at neutral acceptor sites in CdSe are investigated. The NQBS offers the possibility to distinguish between quantum beats from a three-level system and polarization interference from independent two-level systems. The localized biexciton states are discussed in analogy with excited states of holes in neutral donor complexes.
引用
收藏
页码：800 / 804
页数：5
相关论文
共 50 条
  • [1] BOUND BIEXCITONS IN II-VI SEMICONDUCTORS
    RAZBIRIN, BS
    NELSON, DK
    ERLAND, J
    PANTKE, KH
    LYSSENKO, VG
    HVAN, JM
    [J]. SOLID STATE COMMUNICATIONS, 1995, 93 (01) : 65 - 70
  • [2] BIEXCITONS IN II-VI CRYSTALS
    RAZBIRIN, BS
    URALTSEV, IN
    MIKHAILOV, GV
    [J]. JETP LETTERS, 1977, 25 (04) : 174 - 177
  • [3] NONLINEAR QUANTUM BEAT SPECTROSCOPY IN SEMICONDUCTORS
    PANTKE, KH
    HVAM, JM
    [J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 1994, 8 (1-2): : 73 - 120
  • [4] NONLINEAR SPECTROSCOPY OF DEEP LEVELS IN WIDE-GAP II-VI SEMICONDUCTORS
    BALTRAMIEJUNAS, R
    GAVRYUSHIN, V
    [J]. JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) : 699 - 704
  • [5] Ultrafast coherent spectroscopy in II-VI widegap semiconductors
    Kar, AK
    Tookey, A
    [J]. SELECTED PAPER FROM INTERNATIONAL CONFERENCE ON OPTICS AND OPTOELECTRONICS '98: SILVER JUBILEE SYMPOSIUM OF THE OPTICAL SOCIETY OF INDIA, 1999, 3729 : 192 - 196
  • [6] Quantum Structures of II-VI Diluted Magnetic Semiconductors
    Cibert, J.
    Besombes, L.
    Ferrand, D.
    Mariette, H.
    [J]. SPINTRONICS, 2008, 82 : 287 - +
  • [7] Free and bound exciton dynamics in bulk II-VI semiconductors
    Martín, MD
    Amo, A
    Viña, L
    Karczewski, G
    Kossut, J
    [J]. Physics of Semiconductors, Pts A and B, 2005, 772 : 1170 - 1171
  • [8] DEPHASING OF ACCEPTOR-BOUND EXCITONS IN II-VI SEMICONDUCTORS
    LUMMER, B
    HEITZ, R
    KUTZER, V
    WAGNER, JM
    HOFFMANN, A
    BROSER, I
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1995, 188 (01): : 493 - 505
  • [9] β-NMR in II-VI semiconductors
    Ittermann, B
    Füllgrabe, M
    Heemeier, M
    Kroll, F
    Mai, F
    Marbach, K
    Meier, P
    Peters, D
    Welker, G
    Geithner, W
    Kappertz, S
    Wilbert, S
    Neugart, R
    Lievens, P
    Georg, U
    Keim, M
    [J]. HYPERFINE INTERACTIONS, 2000, 129 (1-4): : 423 - 441
  • [10] RECENT DEVELOPMENTS IN THE OPTICAL SPECTROSCOPY OF II-VI COMPOUND SEMICONDUCTORS
    DEAN, PJ
    [J]. CZECHOSLOVAK JOURNAL OF PHYSICS, 1980, 30 (03) : 272 - 287
12345