THERMALLY-INDUCED DEFECTS IN SILICON CONTAINING OXYGEN AND CARBON

被引：80
|
作者：
MINAEV, NS
MUDRYI, AV
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 68卷 / 02期
关键词：
D O I：
10.1002/pssa.2210680227
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：561 / 566
页数：6
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