ON THE DETERMINATION OF DOPANT CARRIER DISTRIBUTIONS

Accurate determination of dopant and carrier distributions for ultra-large-scale integrated devices poses stringent requirements to the analysis tools used. In assessing their potential one has to investigate their properties with respect to near-surface quantification, depth resolution, quantification for multilayers as well as the aspects of reproducibility, sensitivity, and generality in the application. In this article these aspects are discussed for the dopant profiling techniques Rutherford backscattering spectroscopy, secondary ion mass spectrometry, and the carrier profiling methods spreading resistance profiling, capacitance-voltage, scanning tunneling microscopy, and transmission electron microscopy.