P-TYPE CDSE GROWN BY MOLECULAR-BEAM EPITAXY USING A NITROGEN PLASMA SOURCE

被引：25
|
作者：
OHTSUKA, T
KAWAMATA, J
ZHU, ZQ
YAO, T
机构：
[1] Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, 1-4-1, Kagamiyama
来源：
APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 04期
关键词：
D O I：
10.1063/1.112338
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the growth of p-type CdSe having zinc blende structure with the hole concentration of 1 X 10(17) cm-3 by molecular beam epitaxy using a nitrogen plasma source. The electrical and optical properties of CdSe:N epilayers are characterized by Hall and photoluminescence (PL) measurements. PL spectra from p-type CdSe:N epilayers at 14 K show dominant emission associated with a neutral donor-bound excitation at 1.745 eV and two kinds of donor-acceptor pair emission bands with zero phonon energies of 1.724 and 1.695 eV An Au/p-CdSe:N electrode is examined as ohmic contact for p-ZnSe in terms of current-voltage characteristic. It is shown that the Au p-CdSe electrode works as an ohmic contact for p-ZnSe.
引用
收藏
页码：466 / 468
页数：3
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