THE HARDNESS AND ELASTIC-MODULUS OF CHROMIUM-IMPLANTED SILICON-CARBIDE

被引：14
|
作者：
MCHARGUE, CJ
JOSLIN, DL
WILLIAMS, JM
机构：
[1] Oak Ridge National Laboratory, Oak Ridge
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1990年 / 46卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(90)90695-Q
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The hardness and elastic modulus of α-SiC single crystals were determined using an ultra-low load micro-indentation hardness tester for implantation conditions that produced both crystalline and amorphous as-implanted surfaces. The effect of fluence for 260 keV chromium implantation was noted as was the effect of substrate temperature. For implantation at room temperature, the relative hardness (implanted/unimplanted) rises to a maximum of 1.10 at a fluence of 1.5 × 1014 Cr/cm2 (260 keV) and then decreases with increasing fluence as amorphization begins. The fully amorphous silicon carbide has a hardness value that is about 40% of the unimplanted value. The elastic modulus of the implanted material is lower for all implanted conditions. © 1990.
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页码：185 / 188
页数：4
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