DEVELOPMENT AND ELECTRICAL-PROPERTIES OF UNDOPED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS

被引：210
|
作者：
PROANO, RE
MISAGE, RS
AST, DG
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 09期
关键词：
D O I：
10.1109/16.34270
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1915 / 1922
页数：8
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