Capacitive MEMS Accelerometer Based on Silicon-on-Insulator Technology: Design, Simulation and Radiation Affect

This work introduces the design, simulation and the radiation effects for an out of plane micromachined z-axis accelerometer based on the silicon-on-insulator technology. In this design, the response to acceleration is sensed capacitevely via four comb-finger capacitors. This scheme helps the implementation of the sensor by the bulk micromachining process. The simulation results shows a good z-axis sensitivity of 24.14(pm/g) and a total equivalent noise acceleration as small as 3.41(mu g/(Hz)(1/2)) and a minimum off-axis sensitivities of 0.15% and 0.3% in x- and y-directions respectively. The radiation sensitivity depends on the sensing or actuation principle, device design, and radiation-induced trapped charge in dielectrics.