GAS SENSITIVITY OF SEMICONDUCTOR FE2O3-BASED THICK-FILM SENSORS TO CH4, H-2, AND NH3

被引：19
|
作者：
MALYSHEV, VV
ERYSHKIN, AV
KOLTYPIN, EA
VARFOLOMEEV, AE
VASILIEV, AA
机构：
[1] Russian scientific Centre 'Kurchatov Institute'
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 1994年 / 19卷 / 1-3期
关键词：
D O I：
10.1016/0925-4005(93)01031-X
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
Gas sensitivity of Fe2O3-based thick-film sensors in gas mixtures of air with CH4, H-2 and NH3 has been analysed. Dependences of relative variation of the sensor conductivity on the heater power and the concentration of the gas under analysis have been derived. Optimal thermal conditions ensuring the best gas sensitivity have been determined for each of the gases. The estimated time constant of a sensor is at 90%.
引用
收藏
页码：434 / 436
页数：3
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