PROCESSES AT TURN-ON OF THYRISTORS

被引：11

作者：

CORNU, J ^{[1
]}

JAECKLIN, AA ^{[1
]}

机构：

[1] BROWN BOVERI & CO LTD,CH-5401 BADEN,SWITZERLAND

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 7-8期

关键词：

D O I：

10.1016/0038-1101(75)90140-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：683 / &

共 50 条

[1] SKIP TURN-ON OF THYRISTORS
DODSON, WH
LONGINI, RL
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (07) : 598 - +
[2] CONTROLLED TURN-ON THYRISTORS
TEMPLE, VAK
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) : 816 - 824
[3] Temperature dependence of turn-on processes in 4H-SiC thyristors
Levinshtein, ME
Mnatsakanov, TT
Ivanov, PA
Agarwal, AK
Palmour, JW
Rumyantsev, SL
Tandoev, AG
Yurkov, SN
SOLID-STATE ELECTRONICS, 2001, 45 (03) : 453 - 459
[4] INSTALLATION FOR INVESTIGATING TURN-ON PROCESSES IN ULTRAHIGH-SPEED MODULATOR THYRISTORS
KARDOSYSOEV, AF
RESHETIN, VP
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1976, 19 (05) : 1380 - 1382
[5] POSSIBILITIES OF TURN-ON PROCESS ACCELERATION IN THYRISTORS
GREKHOV, IV
KARDOSYSOEV, AF
LEVINSHTEIN, ME
RESHETIN, VP
RADIOTEKHNIKA I ELEKTRONIKA, 1975, 20 (08): : 1766 - 1768
[6] TURN-ON PROCESS OF ASYMMETRICAL MODULATOR THYRISTORS
SHUMAN, VB
RADIOTEKHNIKA I ELEKTRONIKA, 1980, 25 (07): : 1560 - 1562
[7] TEMPERATURE RISE IN THYRISTORS DURING TURN-ON
LUNDSTROM, I
INTERNATIONAL JOURNAL OF ELECTRONICS, 1967, 23 (01) : 69 - +
[8] INSTALLATION FOR INVESTIGATING TURN-ON PROCESSES IN ULTRAHIGH-SPEED MODULATOR THYRISTORS.
Kardo-Sysoev, A.F.
Reshetin, V.P.
Instruments and Experimental Techniques (English Translation of Pribory I Tekhnika Eksperimenta), 1976, 19 (5 pt 1): : 1380 - 1382
[9] TURN-ON PHENOMENA IN OPTICALLY AND ELECTRICALLY FIRED THYRISTORS
JAECKLIN, AA
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) : 1552 - 1560
[10] GATE-TRIGGERED TURN-ON PROCESS IN THYRISTORS
BERGMAN, GD
SOLID-STATE ELECTRONICS, 1965, 8 (09) : 757 - &

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