PHYSICAL AND ELECTRICAL CHARACTERIZATION OF MN-IMPLANTED ZNS THIN-FILMS

Physical and conduction characteristics of 10 keV Mn-implanted ZnS films which have been used for electroluminescence have been investigated. The Mb dose which was measured by atomic absorption spectroscopy ranged from 1. 2 multiplied by 10**1**4 to 1. 2 multiplied by 10**1**6 cm** minus **2. Ellipsometry was used to establish a color chart for these films when deposited on silicon substrates. The refractive index and relative dielectric constant was also measured. Reflection electron diffraction showed that crystallinity improved with increase in substrate temperature during deposition but the net evaporation rate was reduced due to re-evaporation from the substrate.