Effect of Joule Heating on Electromigration Characteristics of Sn-3.5Ag Flip Chip Solder Bump

被引：1

作者：

Lee, Jang-Hee ^{[1
]}

Yang, Seung-Taek ^{[2
]}

Suh, Min-Suk ^{[2
]}

Chung, Qwan-Ho ^{[2
]}

Byun, Kwang-Yoo ^{[2
]}

Park, Young-Bae ^{[1
]}

机构：

[1] Andong Natl Univ, Sch Mat Sci & Engn, Andong 760749, South Korea

[2] Hynix Semicond Inc, Package R&D Div, Ichon 467701, South Korea

来源：

KOREAN JOURNAL OF MATERIALS RESEARCH | 2007年 / 17卷 / 02期

关键词：

Electromigration; Joule heating; flip chip bonding; Pb-free; Sn-3.5Ag;

D O I：

10.3740/MRSK.2007.17.2.091

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electromigration characteristics of Sn-3.5Ag flip chip solder bump were analyzed using flip chip packages which consisted of Si chip substrate and electroplated Cu under bump metallurgy. Electromigration test temperatures and current densities performed were 140 similar to 175 degrees C, and 6 similar to 9x 10(4) A/cm(2), respectively. Mean time to failure of solder bump decreased as the temperature and current density increased. The activation energy and current density exponent were found to be 1.63 eV and 4.6, respectively. The activation energy and current density exponent have very high value because of high Joule heating. Evolution of Cu-Sn intermetallic compound was also investigated with respect to current density conditions.

引用

页码：91 / 95

页数：5

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