SPIN-FLIP RAMAN-SCATTERING BY ELECTRONS BOUND TO DONORS IN CDTE/CD1-XMNXTE MULTIPLE-QUANTUM-WELL STRUCTURES AS A FUNCTION OF BARRIER COMPOSITION

被引：4

作者：

WOLVERSON, D ^{[1
]}

DAVIES, JJ ^{[1
]}

RAILSON, SV ^{[1
]}

HALSALL, MP ^{[1
]}

ASHENFORD, DE ^{[1
]}

LUNN, B ^{[1
]}

机构：

[1] UNIV HULL,DEPT ENGN DESIGN & MANUFACTURE,KINGSTON HULL HU6 7RX,N HUMBERSIDE,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90887-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Experimental and theoretical studies of the exchange-enhanced spin-flip Raman scattering from electrons bound to donors in a series of CdTe/Cd1-xMnxTe multiple quantum well structures have been carried out. In this series, the CdTe well width has been kept constant and the barrier Mn concentration has been varied from 1% to 12%. In some samples two spin-flip Raman signals are observed, attributed to electrons located in the quantum wells, but bound to donors located either in the quantum wells or in the barriers adjacent to the wells. This work provides a new test of a model developed previously for these two signals; the results suggest that the conduction band offset in CdTe/Cd1-xMnxTe heterostructures is not a function of Mn concentration at low concentrations.

引用

页码：656 / 660

页数：5

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