HIGH-PRESSURE PHASE OF GALLIUM NITRIDE

被引：0

作者：

MUNOZ, A ^{[1
]}

KUNC, K ^{[1
]}

机构：

[1] UNIV PARIS 06, CNRS, PHYS SOLIDES LAB 154, F-75252 PARIS 05, FRANCE

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 18期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The recently found high-pressure phase of GaN is studied theoretically, using the density-functional theory. The E(V) phase diagram set up from the calculated total energies shows that the crystal structure of this phase is rocksalt or NiAs, and the calculated energy bands indicate that both modifications are semiconducting.

引用

页码：10372 / 10373

页数：2

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