ELECTRON-DIFFRACTION AND EXELFS STUDIES OF AMORPHOUS-SILICON MATERIALS

被引：0

作者：

GARG, RK

BALOSSIER, G

SEVELY, J

THOMAS, X

BONHOMME, P

机构：

[1] FAC SCI REIMS,MICROSCOPIE ELECTR LAB,F-51062 REIMS,FRANCE

[2] CNRS,F-31055 TOULOUSE,FRANCE

来源：

JOURNAL DE MICROSCOPIE ET DE SPECTROSCOPIE ELECTRONIQUES | 1986年 / 11卷 / 02期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：A29 / A29

页数：1

共 50 条

[1] ELECTRON-DIFFRACTION ANALYSIS OF THE GROWTH OF HYDROGENATED AMORPHOUS-SILICON THIN-FILMS
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[2] ELECTRON-DIFFRACTION STUDY OF THE STRUCTURE OF BORON-DOPED AND PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
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[4] ELECTRON-DIFFRACTION STUDY OF AMORPHOUS SILICON-OXIDE FILMS
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[7] ELECTRON-DIFFRACTION STUDIES OF STRUCTURE OF AMORPHOUS FILMS OF CARBON AND BORON
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[8] ELECTRON-DIFFRACTION IN POROUS SILICON
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[9] INVESTIGATION OF AMORPHOUS MATERIALS BY ELECTRON-DIFFRACTION - THE EFFECTS OF MULTIPLE-SCATTERING
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[10] AN ELECTRON-DIFFRACTION STUDY OF AMORPHOUS TLSE
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