共 10 条
- [1] DETERMINATION OF THE CHARGE OF QUASIPOINT CLUSTERS OF ACCEPTOR IMPURITY ATOMS IN COMPENSATED N-TYPE INP CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (06): : 719 - 720
- [3] A POSITIVITY METHOD FOR THE DETERMINATION OF COMPLETE ORIENTATION DISTRIBUTION-FUNCTIONS TEXTURES AND MICROSTRUCTURES, 1988, 10 (01): : 21 - 35
- [5] TRAPPING OF IMPURITY ATOMS BY DEFECTS AND THE DISTRIBUTION OF CLUSTERS DURING ION BOMBARDMENT OF GROWING FILMS. Soviet physics. Technical physics, 1982, 27 (11): : 1375 - 1379
- [6] NEAR-NEIGHBOR CONFIGURATION AND IMPURITY-CLUSTER SIZE DISTRIBUTION IN A POISSON ENSEMBLE OF MONO-VALENT IMPURITY ATOMS IN SEMICONDUCTORS PHYSICAL REVIEW B, 1983, 27 (08): : 4997 - 5006
- [7] TREATMENT OF SPECTRAL-LINE CONTOURS AND DETERMINATION OF DISTRIBUTION-FUNCTIONS FOR EXCITED ATOMS IN A HF NONEQUILIBRIUM DISCHARGE OPTIKA I SPEKTROSKOPIYA, 1988, 65 (03): : 508 - 513
- [10] DISTRIBUTION OF THE CHARGE AND FORMATION OF DEEP LEVELS IN SEMICONDUCTORS BASED ON THE RESULTS OF THE SELF-CONSISTENT GREEN-FUNCTION METHOD - DEFECTS IN SILICON AND GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (01): : 18 - 22