ULTRA-HIGH GAIN, LOW-NOISE MONOLITHIC INP HEMT DISTRIBUTED-AMPLIFIER FROM 5 TO 40 GHZ

被引：4
|
作者：
YUEN, C
PAO, YC
DAY, M
NISHIMOTO, C
GLENN, M
BANDY, S
ZDASIUK, C
机构：
[1] Varian Research Center, Device Laboratory, Palo Alto, 611 Hansen Way
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 08期
关键词：
Amplifiers; Indium compounds; Semiconductor devices and materials;
D O I：
10.1049/el:19900335
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A monolithic 5.45 GHz distributed amplifier has been developed utilising 0.25 µm InAlAs/InGaAs lattice matched HEMTs with a mushroom gate profile as active devices. A measured gain of 12.5 ± 0.5dB from 5 to 40GHz and a measured noise figure of 2.5-4 dB in the Ka-band were achieved. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码：515 / 516
页数：2
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