PERIPHERAL EMITTER-BASE JUNCTION CAPACITANCE IN BIPOLAR-TRANSISTORS

被引：4

|

作者：

ROULSTON, DJ

KUMAR, RC

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 05期

关键词：

D O I：

10.1109/T-ED.1979.19499

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：810 / 811

页数：2

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