MAGNETIC-FIELD STUDIES OF NEGATIVE DIFFERENTIAL CONDUCTIVITY IN DOUBLE BARRIER RESONANT TUNNELLING STRUCTURES BASED ON N-INP/(INGA)AS

被引：67
|
作者：
LEADBEATER, ML [1 ]
EAVES, L [1 ]
SIMMONDS, PE [1 ]
TOOMBS, GA [1 ]
SHEARD, FW [1 ]
CLAXTON, PA [1 ]
HILL, G [1 ]
PATE, MA [1 ]
机构：
[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
来源：
SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 3-4期
关键词：
This work is supported by SERC;
D O I：
10.1016/0038-1101(88)90372-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
12
引用
收藏
页码：707 / 710
页数：4
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