EPITAXIAL ORIENTATION RELATIONSHIP OF V-FILMS ON AG (111) FILMS

被引：3
|
作者：
GOTOH, Y
NISHIMURA, H
HAGIO, M
YUMOTO, H
机构：
[1] Department of Materials Science and Technology, Science University of Tokyo, Noda
来源：
MATERIALS LETTERS | 1992年 / 15卷 / 1-2期
关键词：
D O I：
10.1016/0167-577X(92)90019-G
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin films of double layers of V/Ag deposited on mica have been investigated by transmission electron microscopy. Epitaxial growth of V on Ag (111) surfaces takes place obviously at elevated temperatures (almost-equal-to 150-degrees-C) and the growth mode is island growth. The crystallography of the expitaxy is distributed among the Nishiyama-Wassermann and Kurdjumov-Sachs relationships. The R30-degrees relationship predicted from calculations of the interfacial energy was not observed. Moire patterns and misfit dislocations were observed, which are characteristic of epitaxial growth between the two layers.
引用
收藏
页码：92 / 94
页数：3
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