SITAR - AN EFFICIENT 3-D SIMULATOR FOR OPTIMIZATION OF NONPLANAR TRENCH STRUCTURES

被引：2
|
作者：
BERGNER, W
KIRCHER, R
机构：
[1] Corporate Research and Development, D-8000 München 83, SIEMENS AG
来源：
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1990年 / 9卷 / 11期
关键词：
D O I：
10.1109/43.62755
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A 3-D device simulator is presented which allows the investigation of the electrical behavior of nonplanar trench-type device structures. It has been used to analyze leakage due to punch through between neighboring trench capacitors, depending on geometry and doping profiles. Using an analytical model to estimate the leakage current, and a completely vectorized solution algorithm for all three semiconductor equations, the program proved to be a very efficient tool to optimize the cell size of 4- and 16-Mb DRAM's. © 1990 IEEE
引用
收藏
页码：1184 / 1188
页数：5
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