共 50 条
- [1] DEPENDENCE OF THE INHOMOGENEITY OF INDIUM-ANTIMONIDE ON THE DOPANT CONCENTRATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (05): : 581 - 582
- [4] KINETICS OF CHANGES IN THE CARRIER DENSITY IN INDIUM-ANTIMONIDE DUE TO IRRADIATION WITH 50-MEV ELECTRONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (09): : 1106 - 1107
- [5] EFFECTIVE-MEDIUM THEORY AND FREQUENCY-DEPENDENCE OF CONDUCTIVITY OF EVAPORATED-FILMS OF AMORPHOUS-GERMANIUM, INDIUM-ANTIMONIDE, AND GALLIUM-ARSENIDE PHYSICAL REVIEW B, 1978, 18 (06): : 2761 - 2765
- [7] TEMPERATURE DEPENDENCE OF CARRIER LIFETIME IN INDIUM ANTIMONIDE SOVIET PHYSICS-SOLID STATE, 1962, 4 (01): : 78 - 86
- [9] DETERMINATION OF THE DENSITY OF STATES IN ALLOWED BANDS OF INDIUM-ANTIMONIDE AND LEAD SULFIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (05): : 603 - 605