PROXIMITY EFFECT IN Nb/Al,AlOxide,Al/Nb JOSEPHSON TUNNEL JUNCTIONS

被引:4
|
作者
Houwman, E. P. [1 ]
Gijsbertsen, J. G. [1 ]
Flokstra, J. [1 ]
Rogalla, H. [1 ]
le Grand, J. B. [2 ]
de Korte, P. A. J. [2 ]
Golubov, A. A. [3 ]
机构
[1] Univ Twente, Dept Appl Phys, POB 217, NL-7500 AE Enschede, Netherlands
[2] Space Res Org Netherlands, Sorbonnelaan 2, NL-3584 CA Utrecht, Netherlands
[3] Russian Acad Sci, Inst Solid State Phys, Moscow 142432, Russia
关键词
D O I
10.1109/77.233933
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Regions with reduced energy gap induced by the proximity effect give rise to quasi-particle loss in Josephson junction X-ray detectors, but may also be used advantageously for quasi-particle collection. The influence of the thickness of the Al proximity layers in Nb/Al-1,Alox,Al-2/Nb Josephson tunnel junctions on the electrical characteristics has been investigated theoretically and experimentally. Theoretically it is found that the strength of the proximity effect is mainly determined by the proximity parameters gamma(M1) (gamma(M2)) of the electrodes. Good fits of the measured IV -curves with theory were obtained for junctions with thicknesses d(A11) ranging from 4 to 25 nm and d(A12)=3nm, with gamma(M2 approximate to)0.12 and gamma(M1)/gamma(M2)=d(A11)/d(A12) For all junctions the proximity knee remains more pronounced than predicted. The measured I-c(T) and V-g (T) curves could be fitted, taking Delta(0S)/k(B)TcS approximate to 1.92 for Nb.
引用
收藏
页码:2170 / 2173
页数:4
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