OPTICAL-ABSORPTION OF ION-IMPLANTED AMORPHOUS-SILICON

被引:1
|
作者
BHATIA, KL [1 ]
KRATSCHMER, W [1 ]
KALBITZER, S [1 ]
机构
[1] MAX PLANCK INST NUCL PHYS,POB 103980,D-6900 HEIDELBERG 1,FED REP GER
关键词
D O I
10.1016/0040-6090(88)90444-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
4
引用
收藏
页码:331 / 335
页数:5
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