Theoretical Calculation of Electronic Structure and Optical Properties of Two-Dimensional GaAs

被引:1
|
作者
Chu Yujin [1 ]
Zhang Jinmin [1 ]
Gao Tinghong [1 ]
Tian Zean [1 ]
Liang Yongchao [1 ]
Chen Qian [1 ]
Huang Zhongnian [1 ]
Xie Quan [1 ]
机构
[1] Guizhou Univ, Coll Big Data & Informat Engn, Guiyang 550025, Guizhou, Peoples R China
关键词
materials; nanomaterials; two-dimensional GaAs; first principle; electronic structure; optical properties;
D O I
10.3788/LOP55.041601
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The stability of two-dimensional (2D) graphcnc-like GaAs is theoretically verified by the first-principles method based on the density functional theory (DFT) and the molecular dynamics (MD). The energy band structure, density of states (DOS), and parameters for describing optical properties of 2D GaAs arc calculated. The results show that, two-dimensional GaAs is different from three-dimensional GaAs, and it shows a metallic property because the two highest bands arc overlapping. The dimension reduction results in the enhancement of the interaction among electrons in s and d states of As. More DOS peaks occur with peak position shifts towards a low energy direction. The lower energy bands arc composed of Ga-d, As-s and As-p states, and the higher energy bands arc composed of As-s and As-p states. The 2D GaAs has a static permittivity of 3.67, and has a strong absorption for ultraviolet light. It shows a metallic reflection characteristic in the photon energy ranges of 3. 90-4. 71 cV and 5. 69-6. 90 eV.
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页数:7
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