LOW-PRESSURE DEPOSITION OF SILICON-NITRIDE BY SICL4 AND NH3 REACTION

被引：0

|

作者：

SZENDRO, I

MARTON, E

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 11期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：C458 / C458

页数：1

相关论文

共 50 条

[1] LOW-PRESSURE DEPOSITION OF SILICON-NITRIDE BY SICL4 AND NH3 REACTION
SZENDRO, I
MARTON, E
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : 708 - 709
[2] LOW-PRESSURE DEPOSITION OF SILICON-NITRIDE BY SICL4 AND NH3 REACTION
SZENDRO, I
MARTON, E
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C398 - C398
[3] DEPOSITION OF SILICON-NITRIDE FROM SICL4 AND NH3 IN A LOW-PRESSURE RF PLASMA
RON, Y
RAVEH, A
CARMI, U
INSPEKTOR, A
AVNI, R
[J]. THIN SOLID FILMS, 1983, 107 (02) : 181 - 189
[4] LOW-PRESSURE SILICON-NITRIDE DEPOSITION BY AMMONOLYSIS OF SICL4
VASILYEV, VY
VASILYEVA, LL
[J]. IZVESTIYA SIBIRSKOGO OTDELENIYA AKADEMII NAUK SSSR SERIYA KHIMICHESKIKH NAUK, 1983, (06): : 86 - 89
[5] KINETICS OF THE DEPOSITION OF SILICON-NITRIDE LAYERS DUE TO THE REACTION OF SICL4 WITH AMMONIA
SEMENOVA, OI
NENASHEVA, LA
REPINSKII, SM
[J]. INORGANIC MATERIALS, 1984, 20 (05): : 681 - 685
[6] DEPOSITION OF SILICON FROM SICL4 IN AN INDUCTIVE RF LOW-PRESSURE PLASMA
GROSSMAN, E
AVNI, R
GRILL, A
[J]. THIN SOLID FILMS, 1982, 90 (03) : 237 - 241
[7] THE KINETIC-MODEL OF CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE FILMS USING SICL4, NH3, AND H-2
YI, KS
CHUN, JS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C481 - C481
[8] SILICON NITRIDE THIN FILMS FROM SICL4 AND NH3 - PREPARATION AND PROPERTIES
GRIECO, MJ
WORTHING, FL
SCHWARTZ, B
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) : C212 - &
[9] 2-STAGE MODEL OF SILICON-NITRIDE FILM DEPOSITION DURING THE REACTION OF SICL4 WITH AMMONIA
SEMENOVA, OI
NENASHEVA, LA
[J]. INORGANIC MATERIALS, 1989, 25 (01): : 42 - 45
[10] SILICON NITRIDE THIN FILMS FROM SICL4 PLUS NH3 - PREPARATION AND PROPERTIES
GRIECO, MJ
WORTHING, FL
SCHWARTZ, B
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (05) : 525 - +

← 1 2 3 4 5 →