SUB-THRESHOLD VELOCITY-FIELD CHARACTERISTIC OF N-TYPE INDIUM-PHOSPHIDE AT 77 K

被引：2

|

作者：

HAMILTON, DK

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 10期

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D O I：

10.1063/1.89855

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：682 / 683

页数：2

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[7] MICROWAVE MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF N-TYPE INP
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[8] TEMPERATURE DEPENDENCE OF VELOCITY-FIELD CHARACTERISTIC IN N-TYPE GAAS
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[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1972, 32 (04) : 1010 - +
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[J]. SOLID-STATE ELECTRONICS, 1984, 27 (8-9) : 817 - 818
[10] ELECTRICAL-PROPERTIES OF N-TYPE EPITAXIAL INDIUM-PHOSPHIDE FILMS
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[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3397 - 3401

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