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- [9] PROXIMITY GETTERING OF TRANSITION-METALS IN SILICON BY ION-IMPLANTATION[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2): : 257 - 260OVERWIJK, MHFPOLITIEK, JDEKRUIF, RCMZALM, PC
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