OPTIMUM SEMICONDUCTORS FOR HIGH-POWER ELECTRONICS

被引：460

作者：

SHENAI, K ^{[1
]}

SCOTT, RS ^{[1
]}

BALIGA, BJ ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

关键词：

D O I：

10.1109/16.34247

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1811 / 1823

页数：13

共 50 条

[1] Wide-gap semiconductors for high-power electronics
A. A. Lebedev
V. E. Chelnokov
[J]. Semiconductors, 1999, 33 : 999 - 1001
[2] Wide-gap semiconductors for high-power electronics
Lebedev, AA
Chelnokov, VE
[J]. SEMICONDUCTORS, 1999, 33 (09) : 999 - 1001
[3] HIGH-POWER ELECTRONICS
HINGORANI, NG
STAHLKOPF, KE
[J]. SCIENTIFIC AMERICAN, 1993, 269 (05) : 78 - 85
[4] GaN high-power electronics
不详
[J]. SOLID STATE TECHNOLOGY, 2002, 45 (04) : S1 - S1
[5] High-power picosecond electronics
Mesyats, GA
Yalandin, MI
[J]. PHYSICS-USPEKHI, 2005, 48 (03) : 211 - 229
[6] HIGH-POWER MICROWAVE ELECTRONICS
MITTLER, G
[J]. ZEITSCHRIFT FUR FLUGWISSENSCHAFTEN, 1966, 14 (05): : 254 - &
[7] HIGH-POWER MICROWAVE ELECTRONICS
CARROLL, JE
[J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1965, 16 (04): : 582 - &
[8] ELECTRONICS HIGH-POWER AND LOW-POWER
JOHNSON, WT
[J]. PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1969, 116 (02): : 213 - &
[9] SiC for applications in high-power electronics
Brandt, CD
Clarke, RC
Siergiej, RR
Casady, JB
Sriram, S
Agarwal, AK
Morse, AW
[J]. SIC MATERIALS AND DEVICES, 1998, 52 : 195 - 236
[10] KAPITZA,PL - HIGH-POWER ELECTRONICS
HULL, JF
[J]. ELECTRONICS, 1967, 40 (11): : 196 - &